Improvement of AlGaAs/GaAs Quantum Well Laser Diodes by Thermal Annealing
Vol. 18, No. 3, pp. 449-455, Mar. 1993
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Cite this article
[IEEE Style]
정현필, 謝可舟, 魏楸良, 이윤현, "Improvement of AlGaAs/GaAs Quantum Well Laser Diodes by Thermal Annealing," The Journal of Korean Institute of Communications and Information Sciences, vol. 18, no. 3, pp. 449-455, 1993. DOI: .
[ACM Style]
정현필, 謝可舟, 魏楸良, and 이윤현. 1993. Improvement of AlGaAs/GaAs Quantum Well Laser Diodes by Thermal Annealing. The Journal of Korean Institute of Communications and Information Sciences, 18, 3, (1993), 449-455. DOI: .
[KICS Style]
정현필, 謝可舟, 魏楸良, 이윤현, "Improvement of AlGaAs/GaAs Quantum Well Laser Diodes by Thermal Annealing," The Journal of Korean Institute of Communications and Information Sciences, vol. 18, no. 3, pp. 449-455, 3. 1993.
pISSN : 1226 - 4717
eISSN : 2287 - 3880