Analysis of the Inversion Layer Depth in Strong Inversion of n-MOS FET
Vol. 24, No. 6, pp. 132-138, Jun. 1999
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Cite this article
[IEEE Style]
노영준 and 김철성, "Analysis of the Inversion Layer Depth in Strong Inversion of n-MOS FET," The Journal of Korean Institute of Communications and Information Sciences, vol. 24, no. 6, pp. 132-138, 1999. DOI: .
[ACM Style]
노영준 and 김철성. 1999. Analysis of the Inversion Layer Depth in Strong Inversion of n-MOS FET. The Journal of Korean Institute of Communications and Information Sciences, 24, 6, (1999), 132-138. DOI: .
[KICS Style]
노영준 and 김철성, "Analysis of the Inversion Layer Depth in Strong Inversion of n-MOS FET," The Journal of Korean Institute of Communications and Information Sciences, vol. 24, no. 6, pp. 132-138, 6. 1999.
pISSN : 1226 - 4717
eISSN : 2287 - 3880