Design & Fabrication of an InGaP/GaAs HBT MMIC Power Amplifier for IMT-2000 Handsets 


Vol. 28,  No. 11, pp. 902-911, Nov.  2003


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  Abstract

Using InGaP/GaAs HBT power cells with a 2.0×20㎛2 emitter area of a unit HBT, a two stage. MMIC power amplifier has been developed for IMT-2000 handsets. An active-bias circuit has been used for temperature compensation and reduction in the idling current. Fitting on measured S-parameters of the. HBT cells, circuit elements of HBT's nonlinear equivalent model have been extracted. The matching circuits have been designed basically with the extracted model. A two stage HBT MMIC power amplifier fabricated using ETRI's HBT process. The power amplifier produces an I-dB compressed output power(P₁-dB) of 28.4 dBm with 31% power added efficiency(pAE) and 23-dB power gain at 1.95 GHz in on-wafer measurement. Also, the power amplifier produces a 26 dBm output power, 28% PAE and a 22.3-dB power gain with a -40 dBc ACPR at a 3.84 MHz off-center frequency in COB measurement.

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  Cite this article

[IEEE Style]

K. Chae, S. Kim, K. Lee, C. Kim, "Design & Fabrication of an InGaP/GaAs HBT MMIC Power Amplifier for IMT-2000 Handsets," The Journal of Korean Institute of Communications and Information Sciences, vol. 28, no. 11, pp. 902-911, 2003. DOI: .

[ACM Style]

Kyu-Sung Chae, Sung-Il Kim, Kyong-Ho Lee, and Chang-Woo Kim. 2003. Design & Fabrication of an InGaP/GaAs HBT MMIC Power Amplifier for IMT-2000 Handsets. The Journal of Korean Institute of Communications and Information Sciences, 28, 11, (2003), 902-911. DOI: .

[KICS Style]

Kyu-Sung Chae, Sung-Il Kim, Kyong-Ho Lee, Chang-Woo Kim, "Design & Fabrication of an InGaP/GaAs HBT MMIC Power Amplifier for IMT-2000 Handsets," The Journal of Korean Institute of Communications and Information Sciences, vol. 28, no. 11, pp. 902-911, 11. 2003.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880