A design of the linearly controlled CMOS Attenuator 


Vol. 29,  No. 4, pp. 458-465, Apr.  2004


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  Abstract

To reaffirm the use of a mainstream CMOS process for designing passive-like attenuator structures, a linearly controlled variable attenuator is realized with O.35um 2-poly 4-metal CMOS process. It uses the Π configuration for large attenuation range and suitable matching property. Compared to conventional passive-like CMOS attenuators, it is demonstrated that this work advances the frequency band from MHz to GHz (DC-1GHz), and reduces the size to 700um X 300um. Both simulation results and test results are provided. They show the improved linear relation between attenuation and control voltage. It is very useful in CDMA or GSM band, which uses under 1GHz frequency band. An alternative topology, Bridged-T configuration, is proposed to get over the limit of applications by elevating operation bandwidth. The proposed topology covers over DC-2GHz frequency band, which means that the proposed architecture can cover the tripleband (800MHz CDMA/GSM, 1.5GHz GPS, 1.9GHz PCS system) in applications as well. The simulation results are provided.

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  Cite this article

[IEEE Style]

Y. Song, J. Kim, S. Kim, "A design of the linearly controlled CMOS Attenuator," The Journal of Korean Institute of Communications and Information Sciences, vol. 29, no. 4, pp. 458-465, 2004. DOI: .

[ACM Style]

Yun-Seob Song, Jae-Min Kim, and Soo-Won Kim. 2004. A design of the linearly controlled CMOS Attenuator. The Journal of Korean Institute of Communications and Information Sciences, 29, 4, (2004), 458-465. DOI: .

[KICS Style]

Yun-Seob Song, Jae-Min Kim, Soo-Won Kim, "A design of the linearly controlled CMOS Attenuator," The Journal of Korean Institute of Communications and Information Sciences, vol. 29, no. 4, pp. 458-465, 4. 2004.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880