AlGaAs/InGaAs/GaAs power PHEMT with a 0.2 ㎛ gate length for MIMIC power amplifier.
Vol. 27, No. 4, pp. 365-371, Apr. 2002
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Cite this article
[IEEE Style]
E. Rhee, "AlGaAs/InGaAs/GaAs power PHEMT with a 0.2 ㎛ gate length for MIMIC power amplifier.," The Journal of Korean Institute of Communications and Information Sciences, vol. 27, no. 4, pp. 365-371, 2002. DOI: .
[ACM Style]
Eung-ho Rhee. 2002. AlGaAs/InGaAs/GaAs power PHEMT with a 0.2 ㎛ gate length for MIMIC power amplifier.. The Journal of Korean Institute of Communications and Information Sciences, 27, 4, (2002), 365-371. DOI: .
[KICS Style]
Eung-ho Rhee, "AlGaAs/InGaAs/GaAs power PHEMT with a 0.2 ㎛ gate length for MIMIC power amplifier.," The Journal of Korean Institute of Communications and Information Sciences, vol. 27, no. 4, pp. 365-371, 4. 2002.