A CMOS Band-Pass Delta Sigma Modulator and Power Amplifier for Class-S Amplifier Applications 


Vol. 40,  No. 1, pp. 9-15, Jan.  2015


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  Abstract

A CMOS band-pass delta-sigma modulator(BPDSM) and cascode class-E power amplifier have been developed CMOS for Class-S power amplifier applications. The BPDSM is operating at 1-GHz sampling frequency, which converts a 250-MHz sinusoidal signal to a pulse-width modulated digital signal without the quantization noise. The BPDSM shows a 25-dB SQNR(Signal to Quantization Noise Ratio) and consumes a power of 24 mW at an 1.2-V supply voltage. The class-E power amplifier exhibits an 18.1 dBm of the maximum output power with a 25% drain efficiency at a 3.3-V supply voltage. The BPDSM and class-E PA were fabricated in the Dongbu’s 110-nm CMOS process.

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  Cite this article

[IEEE Style]

Y. Lee, M. Kim, C. Kim, "A CMOS Band-Pass Delta Sigma Modulator and Power Amplifier for Class-S Amplifier Applications," The Journal of Korean Institute of Communications and Information Sciences, vol. 40, no. 1, pp. 9-15, 2015. DOI: .

[ACM Style]

Yong-hwan Lee, Min-woo Kim, and Chang-woo Kim. 2015. A CMOS Band-Pass Delta Sigma Modulator and Power Amplifier for Class-S Amplifier Applications. The Journal of Korean Institute of Communications and Information Sciences, 40, 1, (2015), 9-15. DOI: .

[KICS Style]

Yong-hwan Lee, Min-woo Kim, Chang-woo Kim, "A CMOS Band-Pass Delta Sigma Modulator and Power Amplifier for Class-S Amplifier Applications," The Journal of Korean Institute of Communications and Information Sciences, vol. 40, no. 1, pp. 9-15, 1. 2015.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880